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Photoluminescence thermal quenching in three-dimensional multilayer Si/SiGe nanostructures

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3 Author(s)
Lee, E.-K. ; Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA ; Tsybeskov, L. ; Kamins, T.I.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2837184 

We find that in Si/SiGe three-dimensional multilayer nanostructures, photoluminescence intensity as a function of temperature depends on the excitation intensity. The experimental results are explained using a model where electron-hole separation and nonradiative recombination is controlled by a competition between hole tunneling and thermally activated hole diffusion over the valence band energy barriers at Si/SiGe heterointerfaces.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 3 )

Date of Publication:

Jan 2008

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