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Measuring the electrical characteristics of individual junctions in the SnO2 capped ZnO nanowire arrays on Zn substrate

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6 Author(s)
Liu, Y. ; Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People’s Republic of China ; Wang, S. ; Zhang, Z.Y. ; Peng, L.-M.
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Direct measurements on electrical characteristics have been carried out in situ inside a scanning electron microscope using a multiple nanoprobe system on individual SnO2 capped ZnO nanowires (NWs) within a NW film on a Zn substrate. It is shown that while good Ohmic contacts can be made at Zn–ZnO NW and ZnO NWSnO2 cap (when heavily doped with Zn) junctions, the overall I-V characteristics of the ZnZnOSnO2 junction system differ significantly among different NWs, suggesting doping inhomogeneity in the NW film.

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Applied Physics Letters  (Volume:92 ,  Issue: 3 )