By Topic

Photoluminescence of near-lattice-matched GaN/AlInN quantum wells grown on free-standing GaN and on sapphire substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Tan, L.T. ; Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom ; Martin, R.W. ; ODonnell, K.P. ; Watson, I.M.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Near-lattice-matched GaN/Al1-xInxN single quantum wells, grown using both free-standing GaN and conventional GaN-on-sapphire substrates, are studied by photoluminescence (PL) and PL excitation spectroscopies. PL spectra distinguish luminescence originating in the wells, barriers, and underlying GaN buffer layers. The spectra also reveal significant differences between structures grown simultaneously on the different substrates. The quantum well transition energy decreases as the well width increases due to the intense in-built electric fields, estimated to be 3.0±0.5 MeV/cm, that persist in strain free GaN/Al1-xInxN. Screening of these fields is studied using the excitation power dependence of the PL.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 3 )