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Growth of InAs/Sb:GaAs quantum dots on silicon substrate with high density and efficient light emission in the 1.3 μm band

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4 Author(s)
Lin Li ; Institute for Nano Quantum Information Electronics, Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan ; Guimard, D. ; Rajesh, Mohan ; Arakawa, Yasuhiko

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2952594 

We report on the growth of self-assembled InAs/Sb:GaAs quantum dots (QDs) on silicon substrate by antimony-mediated metal organic chemical vapor deposition. We obtained arrays of InAs/Sb:GaAs/Si QD chains along [0-11], with density as high as 7×1010 cm-2 and low coalescence. These QDs yield emission in the 1.3 μm band. The temperature dependence of the photoluminescence intensity indicates the good optical quality of the grown QDs. Together, these results are promising for the fabrication of InAs/GaAs QD laser on silicon substrate.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 26 )

Date of Publication:

Jun 2008

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