We report on the growth of self-assembled InAs/Sb:GaAs quantum dots (QDs) on silicon substrate by antimony-mediated metal organic chemical vapor deposition. We obtained arrays of InAs/Sb:GaAs/Si QD chains along [0-11], with density as high as 7×1010 cm-2 and low coalescence. These QDs yield emission in the 1.3 μm band. The temperature dependence of the photoluminescence intensity indicates the good optical quality of the grown QDs. Together, these results are promising for the fabrication of InAs/GaAs QD laser on silicon substrate.