The authors report the observation of midinfrared intersubband (ISB) absorption in MgSe/ZnxCd1-xSe multiple quantum wells (MQWs) grown on (001) InP substrates by molecular beam epitaxy. The in situ reflection high energy electron diffraction shows that zincblende MgSe/ZnxCd1-xSe MQWs can be grown with the introduction of ZnxCd1-xSe spacer layers. For quantum wells with the nominal well width of 11–15 ML (3.2–4.4 nm) ISB absorption in the wavelength range of 3.3–4.9 μm is observed. The conduction band offset (CBO) of the MgSe/ZnxCd1-xSe heterostructure is estimated to be 1.2 eV. Using the estimated CBO, the theoretically calculated interband and ISB transition energies agree well with photoluminescence and Fourier-transform infrared spectroscopy measurements. With such a large CBO, ISB transitions in this material system could be extended to the near infrared region.