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Browse Journals & Magazines > Applied Physics Letters ...> Volume:92 Issue:24 Help

Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric

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3 Author(s)
Suri, Rahul ; Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA ; Lichtenwalner, D.J. ; Misra, V.

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The interface between HfO2 and sulfur-passivated GaAs was analyzed after atomic-layer deposition (ALD) and postdeposition annealing (PDA) using x-ray photoelectron spectroscopy. The HfO2 ALD process resulted in elemental arsenic buildup at the interface. Electrical measurements confirmed that the elemental arsenic caused anomalously large values for equivalent oxide thickness (EOT), hysteresis, and frequency dispersion in accumulation. Arsenic outdiffusion after PDA lowered the EOT but increased the gate leakage. Annealing the (NH4)2S-treated GaAs prior to ALD yielded an EOT of 1.85 nm and leakage of 6.6×10-4 A/cm2 at Vg=Vfb-1 V. This modified passivation scheme looks promising for achieving a high-quality HfO2/GaAs interface.

Published in:
Applied Physics Letters  (Volume:92 ,  Issue: 24 )

Date of Publication: Jun 2008

Page(s):
243506 - 243506-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2949079
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jun 2008

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