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Reduction in threshold voltages in GaN-based metal oxide semiconductor field effect transistors

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3 Author(s)
Fujishima, Tatsuya ; Research and Development Headquarters, ROHM Co., Ltd., Kyoto 615-8585, Japan ; Otake, Hirotaka ; Ohta, Hiroaki

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The dc characteristics, such as on-resistances (Ron) and threshold voltages (Vth), of gallium nitride-based metal oxide semiconductor field effect transistors with vertical trench gates have been theoretically derived. The optimized acceptor density and the thickness of p-type layers for n channels (channel length) were estimated to be 3×1017 cm-3 and 0.5 μm, respectively, in order to realize Ron in the sub-mΩ cm2 range. On the other hand, this resulted in a high Vth of 18 V due to the wide bandgap. To achieve low Ron and moderate Vth less than 10 V simultaneously, the insertion of an additional p--type or n-type layer with finite thickness between the gate insulator and the p-type layer was suggested.

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Applied Physics Letters  (Volume:92 ,  Issue: 24 )