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Oblique modes effect on terahertz plasma wave resonant detection in InGaAs/InAlAs multichannel transistors

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15 Author(s)
Shchepetov, A. ; Institut d’Electronique, de Microélectronique et de Nanotechnologie CNRS UMR 8520, Cité Scientifique-Avenue Poincaré BP 60069, 59652 Villeneuve d’Ascq Cedex, France ; Gardes, C. ; Roelens, Y. ; Cappy, A.
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We report on the demonstration of narrow terahertz plasma wave resonant detection at low temperature in 200 nm gate length InGaAs/InAlAs multichannel high electron mobility transistors. We observe that the resonant detection linewidth is smaller than in full channel high electron mobility transistors. We interpret this shrinking by the effect of multichannel geometry that does not allow oblique plasma mode propagation along the channel.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 24 )

Date of Publication:

Jun 2008

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