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Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments

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8 Author(s)
Maeng, Jongsun ; Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea ; Jo, Gunho ; Kwon, Soon-Shin ; Song, Sunghoon
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We report the effects of gate bias sweep rate on the electronic characteristics of ZnO nanowire field-effect transistors (FETs) under different environments. As the device was swept at slower gate bias sweep rates, the current decreased and threshold voltage shifted to a positive gate bias direction. These phenomena are attributed to increased adsorption of oxygen on the nanowire surface by the longer gate biasing time. Adsorbed oxygens capture electrons and cause a surface depletion in the nanowire channel. Different electrical trends were observed for ZnO nanowire FETs under different oxygen environments of ambient air, N2, and passivation.

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Applied Physics Letters  (Volume:92 ,  Issue: 23 )