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Tuning the Schottky barrier height of nickel silicide on p-silicon by aluminum segregation

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3 Author(s)
Sinha, M. ; Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore ; Eng Fong Chor ; Yee-Chia Yeo

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2940596 

We report the Schottky barrier height (SBH) tuning at the nickel silicide (NiSi)/p-Si junction by the introduction of aluminum (Al) using ion implantation and its segregation after silicidation. The SBH for holes has been found to decrease with increasing concentration of Al at the NiSi/p-Si interface. We demonstrate the achievement of one of the lowest reported SBH for holes of 0.12 eV, with less than 0.1 at. % Al in NiSi, which is promising for application in p-channel Schottky source/drain transistors.

Published in:
Applied Physics Letters  (Volume:92 ,  Issue: 22 )

Date of Publication: Jun 2008

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