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Microwave probed photoconductivity spectroscopy of deep levels in Ni doped Ge

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5 Author(s)
Gaubas, E. ; Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 10, LT-10223 Vilnius, Lithuania ; Uleckas, A. ; Grigonis, R. ; Sirutkaitis, V.
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A transient technique to simultaneously measure carrier lifetime and deep levels in semiconductors is proposed based on microwave probed photoconductivity spectroscopy in the wavelength range between 0.5 and 16 μm. The application of this noncontacting technique is illustrated by a study of carrier lifetime and deep levels in Ni implanted and annealed Ge wafers. The activation energies of the deep levels are determined at room temperature and compared with those extracted by means of capacitance deep level transient spectroscopy.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 22 )

Date of Publication:

Jun 2008

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