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Molecular-beam epitaxial growth of III–V semiconductors on Ge/Si for metal-oxide-semiconductor device fabrication

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4 Author(s)
Donghun Choi ; Solid State and Photonics Laboratory, Stanford University, Stanford, California 94305, USA ; Eunji Kim ; McIntyre, Paul C. ; Harris, James S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2929386 

We describe the fabrication of III–V metal-oxide-semiconductor (MOS) devices on Ge/Si virtual substrates using molecular-beam epitaxy. Migration-enhanced epitaxy and low temperature normal GaAs growth produced a sufficiently smooth surface to deposit gate oxides. A 300 nm thick GaAs buffer layer was grown, followed by a 10 nm growth of In0.2Ga0.8As high mobility channel layer. An 8.5 nm thick Al2O3 layer was deposited ex situ by atomic-layer deposition. Capacitance-voltage (C-V) characteristics show the unpinning of Fermi level. This work suggests this materials combination as a promising candidate for the design of advanced, nonclassical complementary MOS and optoelectronic devices on Si substrates.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 20 )

Date of Publication:

May 2008

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