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Threshold voltage shift and formation of charge traps induced by light irradiation during the fabrication of organic light-emitting diodes

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5 Author(s)
Noguchi, Yutaka ; Center for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan ; Sato, Naoki ; Tanaka, Yuya ; Nakayama, Yasuo
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We examined the effects of ambient light on the device properties of an organic light-emitting diode, indium tin oxide/4,4-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl (α-NPD)/tris-(8-hydroxyquinolate) aluminum (Alq3)/Al, during fabrication using displacement current measurement. Light irradiation induces a shift in the threshold voltage for hole injection and results in the formation of charge traps in the Alq3 layer. The voltage shift implies a reduction in charge density at the α-NPD/Alq3 interface. The origin of the interfacial charge can be attributed to dipole moment ordering in the Alq3 layer.

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Applied Physics Letters  (Volume:92 ,  Issue: 20 )