By Topic

Threshold voltage shift and formation of charge traps induced by light irradiation during the fabrication of organic light-emitting diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Noguchi, Yutaka ; Center for Frontier Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan ; Sato, Naoki ; Tanaka, Yuya ; Nakayama, Yasuo
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We examined the effects of ambient light on the device properties of an organic light-emitting diode, indium tin oxide/4,4-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl (α-NPD)/tris-(8-hydroxyquinolate) aluminum (Alq3)/Al, during fabrication using displacement current measurement. Light irradiation induces a shift in the threshold voltage for hole injection and results in the formation of charge traps in the Alq3 layer. The voltage shift implies a reduction in charge density at the α-NPD/Alq3 interface. The origin of the interfacial charge can be attributed to dipole moment ordering in the Alq3 layer.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 20 )