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Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer

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14 Author(s)
Ok, Injo ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin, Texas 78758, USA ; Kim, H. ; Zhang, M. ; Zhu, F.
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In this work, we present the electrical and material characteristics of TaN/HfO2/In0.53Ga0.47As and InP substrate metal-oxide-semiconductor capacitors and self-aligned n-channel metal-oxide-semiconductor field effect transistor (n-MOSFET) with physical vapor deposition Si interface passivation layer. Excellent electrical characteristics, thin equivalent oxide thickness (∼1.7 nm), and small frequency dispersion (≪2%) were obtained. n-channel high-k InGaAs- and InP-MOSFETs with good transistor behavior and good split capacitance-voltage (C-V) characteristics on In0.53Ga0.47As and InP substrates have also been demonstrated.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 20 )

Date of Publication:

May 2008

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