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Line defects of M-plane GaN grown on γ-LiAlO2 by plasma-assisted molecular beam epitaxy

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9 Author(s)
Lo, Ikai ; Department of Physics, Institute of Material Science and Engineering, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan 80424, Republic of China ; Hsieh, Chia-Ho ; Chen, Yen-Liang ; Pang, Wen-Yuan
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The edge and threading dislocations of M-plane GaN epilayers grown on γ-LiAlO2 have been studied by high-resolution transmission electron microscope. We found that edge dislocations were grown in [1100] direction while threading dislocations were generated along a1 or -a2 axes. We also observed a single stacking fault in the M-plane GaN epilayer.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 20 )