Cart (Loading....) | Create Account
Close category search window
 

Resistivity of V2O3 thin films deposited on a-plane (110) and c-plane (001) sapphire by pulsed laser deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Allimi, B.S. ; Materials Science and Engineering Program, Chemical, Materials, and Biomolecular Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06279, USA ; Alpay, S.P. ; Xie, C.K. ; Wells, B.O.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2921787 

Thin films of V2O3 with thickness of 215 nm were grown on a- and c-plane sapphire by pulsed laser deposition with (001)V2O3||(001)Al2O3 and (110)V2O3||(110)Al2O3 epitaxy. The effects of the growth direction on the electrical resistivity of the films were examined. Films on c-plane sapphire displayed a metal-to-insulator transition at T=180 K compared to T=160 K in single-crystal V2O3. The films on a-plane sapphire, however, showed an insulator-to-insulator transition at T=186 K. The variation in the phase transformation characteristics and the resistivity can be attributed to different levels of strain and commensurate changes in the film morphology.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 20 )

Date of Publication:

May 2008

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.