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Resistivity of V2O3 thin films deposited on a-plane (110) and c-plane (001) sapphire by pulsed laser deposition

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6 Author(s)
Allimi, B.S. ; Materials Science and Engineering Program, Chemical, Materials, and Biomolecular Engineering and Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06279, USA ; Alpay, S.P. ; Xie, C.K. ; Wells, B.O.
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Thin films of V2O3 with thickness of 215 nm were grown on a- and c-plane sapphire by pulsed laser deposition with (001)V2O3||(001)Al2O3 and (110)V2O3||(110)Al2O3 epitaxy. The effects of the growth direction on the electrical resistivity of the films were examined. Films on c-plane sapphire displayed a metal-to-insulator transition at T=180 K compared to T=160 K in single-crystal V2O3. The films on a-plane sapphire, however, showed an insulator-to-insulator transition at T=186 K. The variation in the phase transformation characteristics and the resistivity can be attributed to different levels of strain and commensurate changes in the film morphology.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 20 )

Date of Publication:

May 2008

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