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Quantum interference effects and magnetic scattering in the electrical resistivity of Ni nanocrystallites in TiN matrix

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4 Author(s)
Khatua, P. ; Department of Physics, Indian Institute of Technology, Kanpur 208016, Uttar Pradesh, India ; Nath, T.K. ; Banerjee, Mitali ; Majumdar, A.K.

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The electrical resistivity, ρ of self-assembled, epitaxial nickel nanocrystallites in titanium nitride (TiN) matrix, was measured in fields from 0 to 4 T between 4.2 and 300 K. At lower temperatures, ρ(T) conclusively shows

-
 T
dependence below the observed minima at Tmin unlike -ln T in two dimensional multilayers. In this three dimensional system, the origin of the minima lays in quantum interference effects. The ρ(T) data well above Tmin, interpreted in terms of electron-phonon and electron-magnon scatterings, show that the temperature dependence of the composite Ni/TiN sample mainly comes from that of Ni and the residual resistivity from TiN.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 19 )