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Enhancement of charge and energy storage in sol-gel derived pure and La-modified PbZrO3 thin films

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2 Author(s)
Parui, Jayanta ; Materials Research Centre, Indian Institute of Science, Bangalore 560012, India ; Krupanidhi, S.B.

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Antiferroelectric lanthanum-modified PbZrO3 thin films with La contents between 0 and 6 at. % have been deposited on Pt(111)/Ti/SiO2/Si substrate by sol-gel route. On the extent of La-modification, maximum polarization (Pmax) and recoverable energy density (W) have been enhanced followed by their subsequent reduction. A maximum Pmax (∼0.54 C/m2 at ∼60 MV/m) as well as a maximum W (∼14.9 J/cc at ∼60 MV/m) have been achieved on 5% La modification. Both Pmax and W have been found to be strongly dependent on La-induced crystallographic orientations.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 19 )