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{110}-facets formation by hydrogen thermal etching on sidewalls of Si and strained-Si fin structures

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8 Author(s)
Tezuka, T. ; MIRAI-Association of Super-Advanced Electronics Technology (ASET), 1 Komukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan ; Hirashita, N. ; Moriyama, Y. ; Sugiyama, N.
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Si-fin structures for multigate metal-oxide-semiconductor field effect transistors (MOSFETs) with smooth and vertical sidewalls composed of {110} facets were obtained by an anisotropic gas etching in atmospheric hydrogen ambient at 925–1000 °C on strained and unstrained (001) Si-on-insulator (SOI) substrates. {110} facets emerged due to higher etching rate for higher-order crystalline plane adjacent to {110} planes. The facet formation effectively eliminated the fin-width variation originating from the lithography process. The uniaxial stress along the fins on the strained SOI substrate was found to be preserved during the process, indicating the availability of this technique for fabrication of multigate MOSFETs with strained-fin channels.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 19 )