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Compact and explicit physical model for lateral metal-oxide-semiconductor field-effect transistor with nanoelectromechanical system based resonant gate

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7 Author(s)
Duraffourg, L. ; CEA-LETI-MINATEC, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France ; Colinet, E. ; Ollier, E. ; Hentz, S.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2918845 

We propose a simple analytical model of a metal-oxide-semiconductor field-effect transistor with a lateral resonant gate based on the coupled electromechanical equations, which are self-consistently solved in time. All charge densities according to the mechanical oscillations are evaluated. The only input parameters are the physical characteristics of the device. No extra mathematical parameters are used to fit the experimental results. Theoretical results are in good agreement with the experimental data in static and dynamic operation. Our model is comprehensive and may be suitable for any electromechanical device based on the field-effect transduction.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 17 )

Date of Publication:

Apr 2008

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