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Browse Journals & Magazines > Applied Physics Letters ...> Volume:92 Issue:17 Help

Transport properties in C60 field-effect transistor with a single Schottky barrier

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3 Author(s)
Ohta, Yohei ; Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan ; Kubozono, Yoshihiro ; Fujiwara, Akihiko

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2919799 

C60 field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier.

Published in:
Applied Physics Letters  (Volume:92 ,  Issue: 17 )

Date of Publication: Apr 2008

Page(s):
173306 - 173306-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2919799
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Apr 2008

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