An evaluation of TiB2 gate metal on Hf-silicate dielectric prepared by atomic layer deposition method has been reported. The extracted effective metal work function for TiB2 gate was about 5.08 eV. The work function showed almost identical values and the sharp interface between metal and dielectric was confirmed after postdeposition annealing at 1000 °C. The work function lowering (4.91 eV) at 1100 °C was caused by metal-dielectric intermixing and oxygen vacancy formation. TiB2 gate electrode was found to be suitable for use in p-channel metal oxide semiconductor device.