By Topic

An evaluation of thermal stability of TiB2 metal gate on Hf silicate for p-channel metal oxide semiconductor application

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Son, S.Y. ; Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA ; Kumar, P. ; Cho, H. ; Min, K.J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2913766 

An evaluation of TiB2 gate metal on Hf-silicate dielectric prepared by atomic layer deposition method has been reported. The extracted effective metal work function for TiB2 gate was about 5.08 eV. The work function showed almost identical values and the sharp interface between metal and dielectric was confirmed after postdeposition annealing at 1000 °C. The work function lowering (4.91 eV) at 1100 °C was caused by metal-dielectric intermixing and oxygen vacancy formation. TiB2 gate electrode was found to be suitable for use in p-channel metal oxide semiconductor device.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 17 )