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Growth of high-uniformity InAs/GaAs quantum dots with ultralow density below 107 cm-2 and emission above 1.3 μm

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4 Author(s)
Guimard, D. ; Institute for Nano Quantum Information Electronics, Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 Japan ; Lee, Hearin ; Nishioka, M. ; Arakawa, Yasuhiko

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We report the growth of high-uniformity large coherent InAs/GaAs quantum dots (QDs) by metal organic chemical vapor deposition, with density between 106 and 1010 cm-2, emission close to 1.4 μm at room temperature with only GaAs capping, and temperature-independent peak linewidth as low as 14 meV. It is shown that the QD density can be controlled by the InAs coverage, while the QD size remains remarkably constant. The observed decrease of the emission wavelength with coverage is explained by a density-dependent alloying. Microphotoluminescence measurement was performed on bare samples at 5 K and single dot emission was observed.

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Applied Physics Letters  (Volume:92 ,  Issue: 16 )