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High internal quantum efficiency ZnO nanorods prepared at low temperature

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4 Author(s)
Chen, Jie ; Hahn-Meitner Institut, Berlin, Glienicker Strasse 100, 14109 Berlin, Germany ; Ae, L. ; Aichele, Ch. ; Lux-Steiner, M.Ch.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2910769 

A preparation process for ZnO nanorods (or nanowires) by use of electrochemical deposition in an aqueous solution of zinc nitrate and nitric acid at temperatures 75 °C was established. The surface morphologies of ZnO nanostructures can be adjusted with constant high internal quantum efficiency (IQE). The as-grown ZnO nanostructures exhibit a dominant and intense near-band-edge emission. The ZnO nanostructures present an IQE of ∼28% measured by a He–Cd laser under excitation power density of ∼22 W/cm2 at a wavelength of 325 nm.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 16 )

Date of Publication:

Apr 2008

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