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Effect of pressure on the properties of phosphorus-doped p-type ZnO thin films grown by radio frequency-magnetron sputtering

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4 Author(s)
Dae-Kue Hwang ; Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea ; Oh, Min-Suk ; Choi, Yong-Seok ; Park, Seong-Ju

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We report the effect of pressure on the surface morphology, electrical and optical properties of phosphorus (P)-doped p-type ZnO grown by radio frequency magnetron sputtering. The nanorod structures of P-doped ZnO films became dense and flat with decreasing pressure. The Hall effect measurement of the films grown at a pressure of 5–20 mTorr showed an n-type conductivity after rapid thermal annealing. However, the films grown at a low pressure of 1 mTorr showed a p-type conductivity with a hole concentration of 4.71×1818/cm3. This result showed that the pressure of rf-magnetron sputtering plays a critical role in the growth of P-doped p-type ZnO.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 16 )