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Intraband emission at λ≈1.48 μm from GaN/AlN quantum dots at room temperature

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6 Author(s)
Nevou, L. ; Institut d’Electronique Fondamentale, University Paris-Sud, UMR 8622 CNRS, 91405 Orsay, France ; Julien, F.H. ; Tchernycheva, M. ; Guillot, F.
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We report on the intraband emission at room temperature from GaN/AlN quantum dots grown by plasma-assisted molecular-beam epitaxy. The dots exhibit TM-polarized absorption ascribed to the intraband transition from the s to the pz shells. The pz-s intraband luminescence is observed at λ=1.48 μm under optical excitation at λ=1.34 μm perpendicular to the [0001] growth axis. The population of the pz state arises from Raman scattering by GaN A1 longitudinal optical phonons. Based on the emission spectral shape, we estimate that the homogeneous linewidth of the s-pz intraband transition is less than 4 meV.

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Applied Physics Letters  (Volume:92 ,  Issue: 16 )