By Topic

Intraband emission at λ≈1.48 μm from GaN/AlN quantum dots at room temperature

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Nevou, L. ; Institut d’Electronique Fondamentale, University Paris-Sud, UMR 8622 CNRS, 91405 Orsay, France ; Julien, F.H. ; Tchernycheva, M. ; Guillot, F.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We report on the intraband emission at room temperature from GaN/AlN quantum dots grown by plasma-assisted molecular-beam epitaxy. The dots exhibit TM-polarized absorption ascribed to the intraband transition from the s to the pz shells. The pz-s intraband luminescence is observed at λ=1.48 μm under optical excitation at λ=1.34 μm perpendicular to the [0001] growth axis. The population of the pz state arises from Raman scattering by GaN A1 longitudinal optical phonons. Based on the emission spectral shape, we estimate that the homogeneous linewidth of the s-pz intraband transition is less than 4 meV.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 16 )