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Midinfrared InAs/GaSb type-II superlattice interband tunneling photodetectors

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6 Author(s)
Mou, Shin ; Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 1406 West Green Street, Urbana, Illinois 61801, USA ; Petschke, Adam ; Lou, Qi ; Chuang, Shun Lien
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A photovoltaic InAs/GaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0A product is 0.03 Ω cm2 at 200 K and is comparable to that of state-of-the-art InAs/GaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.

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Applied Physics Letters  (Volume:92 ,  Issue: 15 )