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Transport properties of organic field effect transistors modified by quantum dots

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3 Author(s)
Nishioka, Masaya ; School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA ; Chen, Yu ; Goldman, A.M.

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We have investigated the transport properties of organic field effect transistors (OFETs) with quantum dot layers between the organic semiconductor and the dielectric. An insulating dot layer changes the properties of OFETs, suggesting that OFET mobility will always be reduced by additional physical disorder. However, a metal dot layer causes a much larger reduction of the mobility and an increase of the activation energy. This phenomenon may be explained by more charge being induced on metal dots causing the carriers to be more localized.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 15 )