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Electron heating and huge positive magnetoresistance in an AlGaAs/GaAs high electron mobility transistor structure at high temperatures

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10 Author(s)
Liang, C.T. ; Department of Physics, National Taiwan University, Taipei 106, Taiwan ; Yu-Ru Li ; Tzu-Lun Lin ; Lin, Po-Tsun
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We have performed magnetoresistivity measurements ρxx(B) on an AlGaAs/GaAs high electron mobility transistor (HEMT) structure at high temperatures T. The observed positive magnetoresistance (MR) in the HEMT structure can be greatly enhanced simply by increasing the driving current. At T=80 K and B=6 T, the MR value can be increased from ∼150% to 4000%, almost a 30-fold increase when a large current of 40 μA is applied. Such results are due to electron heating effects and our data lay the foundation for practical magnetic device applications which can be readily combined with high-speed electronics, high-frequency amplifiers, and radar using the mature GaAs-based HEMT technology.

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Applied Physics Letters  (Volume:92 ,  Issue: 15 )