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Browse Journals & Magazines > Applied Physics Letters ...> Volume:92 Issue:14 Help

Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Al2O3 Dielectric

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7 Author(s)
Li, Ning ; Lightspin Technologies, Inc., P.O. Box 30198, Bethesda, MD 20824-0198, USA ; Harmon, E.S. ; Hyland, James ; Salzman, D.B.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2908926 

InAs is very attractive as a channel material for high-speed metal-oxide-semiconductor (MOS) field-effect transistors due to its very high electron mobility and saturation velocity. We investigated the processing conditions and the interface properties of an InAs metal-oxide-semiconductor structure with Al2O3 dielectric deposited by atomic-layer deposition. The MOS capacitor I-V and C-V characteristics were studied and discussed. Simple field-effect transistors fabricated on an InAs bulk material without source/drain implantation were measured and analyzed.

Published in:
Applied Physics Letters  (Volume:92 ,  Issue: 14 )

Date of Publication: Apr 2008

Page(s):
143507 - 143507-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2908926
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Apr 2008

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