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Low-power dihexylquaterthiophene-based thin film transistors for analog applications

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11 Author(s)
Serban, Dana A. ; Cermin, Université Catholique de Louvain, 1348 Louvain-la-Neuve, Belgium ; Kilchytska, Valeria ; Vlad, A. ; Martin-Hoyas, Ana
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We have optimized dihexylquaterthiophene-based thin film transistors for low-power consumption and have studied their characteristics for potential introduction in analog circuits. Bottom-gate devices with Pd source and drain electrodes have been fabricated by employing different gate dielectrics. Transistors with very thin (≪10 nm) silicon oxynitride dielectrics display subthreshold swing values below 100 mV/decade, cutoff frequencies approaching the kilohertz range and intrinsic gain around 45 dB, suggesting that they are promising candidates for low-power analog integration.

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Applied Physics Letters  (Volume:92 ,  Issue: 14 )