Low-power dihexylquaterthiophene-based thin film transistors for analog applications

We have optimized dihexylquaterthiophene-based thin film transistors for low-power consumption and have studied their characteristics for potential introduction in analog circuits. Bottom-gate devices with Pd source and drain electrodes have been fabricated by employing different gate dielectrics. Transistors with very thin (≪10 nm) silicon oxynitride dielectrics display subthreshold swing values below 100 mV/decade, cutoff frequencies approaching the kilohertz range and intrinsic gain around 45 dB, suggesting that they are promising candidates for low-power analog integration.