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Increasing the noise margin in organic circuits using dual gate field-effect transistors

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7 Author(s)
Spijkman, M. ; Molecular Electronics, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands ; Smits, E.C.P ; Blom, P.W.M. ; de Leeuw, D.M.
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Complex digital circuits reliably work when the noise margin of the logic gates is sufficiently high. For p-type only inverters, the noise margin is typically about 1 V. To increase the noise margin, we fabricated inverters with dual gate transistors. The top gate is advantageously used to independently tune the threshold voltage. The shift can be quantitatively described by ΔVth=(Ct/Cb)Vtop gate, where Ct and Cb are the top and bottom gate capacitances. We show that by adjusting the top gate biases, the noise margin of dual gate inverters can be significantly improved up to about 5 V.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 14 )

Date of Publication:

Apr 2008

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