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Atomic arrangements of (Ga1-xMnx)N nanorods grown on Al2O3 substrates

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6 Author(s)
Lee, K.H. ; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea ; Lee, J.Y. ; Jung, J.H. ; Kim, T.W.
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X-ray diffraction (XRD) and selected area electron diffraction pattern (SADP) results showed that the (Ga1-xMnx)N nanorods had preferential c-axial growth direction. Transmission electron microscopy (TEM) and high-resolution TEM (HRTEM) images showed that one-dimensional (Ga1-xMnx)N nanorods without defects had c-axis-oriented crystalline wurzite structures. Atomic arrangements for the (Ga1-xMnx)N nanorods grown on the Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

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Applied Physics Letters  (Volume:92 ,  Issue: 14 )