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Browse Journals & Magazines > Applied Physics Letters ...> Volume:92 Issue:14 Help

Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer

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4 Author(s)
Suzuki, R. ; Microsystem Research Center, Precision and Intelligence Laboratory, Tokyo Institute of Technology, R2-39, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan ; Miyamoto, T. ; Sengoku, Tomoyuki ; Koyama, F.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2904705 

Emission and shape characteristics of the InGaAs covered InAs quantum dots with GaNAs strain compensation layers (SCLs) are investigated, focusing on the reduction of the spacer thickness for device applications. Using the GaNAs SCL, the suppression of inhomogeneous emission broadening induced by the compressive strain from lower dot layers was confirmed with the suppression of increase in the dot size of upper dot layers. This result is effective for the suppression of the spacer thickness.

Published in:
Applied Physics Letters  (Volume:92 ,  Issue: 14 )

Date of Publication: Apr 2008

Page(s):
141110 - 141110-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2904705
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Apr 2008

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