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Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

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5 Author(s)
Hsing-Hung Hsieh ; Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan ; Kamiya, Toshio ; Nomura, K. ; Hosono, Hideo
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We report a model of the carrier transport and the subgap density of states in amorphous InGaZnO4 (a-IGZO) for device simulation of a-IGZO thin-film transistors (TFTs) operated in both the depletion mode and the enhancement mode. A simple model using a constant mobility and two-step subgap density of states reproduced well the characteristics of the a-IGZO TFTs. a-IGZO exhibits low densities of tail states and deep gap states, leading to small subthreshold swings and high mobilities.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 13 )