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Huge positive magnetoresistance in a gated AlGaAs/GaAs high electron mobility transistor structure at high temperatures

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9 Author(s)
Liang, C.-T. ; Department of Physics, National Taiwan University, Taipei 106, Taiwan ; Tseng, Yen Shung ; Jau-Yang Wu ; Lin, Sheng-Di
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Magnetoresistivity measurements on a gated AlGaAs/GaAs high electron mobility transistor (HEMT) structure were performed at high temperatures T. By changing the applied gate voltage Vg, we can investigate the observed huge positive magnetoresistance (PMR) at different effective disorder and density inhomogeneity within the same HEMT structure. The observed PMR value increases with increasing disorder in the depletion mode (Vg≤0). Moreover, the PMR value is not limited by the quality of the HEMT structure at T=80 K. Such results pave the way for low-cost, high-throughput GaAs-based HEMT fabrication for future magnetic sensing and recording devices fully compatible with the mature HEMT technology.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 13 )

Date of Publication:

Mar 2008

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