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Features of formation and propagation of 60° and 90° misfit dislocations in GexSi1-x/Si (x∼0.4–0.5) films caused by Si substrate misorientation from (001)

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4 Author(s)
Bolkhovityanov, Yu.B. ; Institute of Semiconductor Physics, Novosibirsk 630090, Russia ; Deryabin, A.S. ; Gutakovskii, A.K. ; Sokolov, L.V.

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We have studied the dislocation structure at the initial stage of relaxation of GexSi1-x films (x∼0.4–0.5) grown on Si substrates tilted 6° about the <011> axis. It is demonstrated that edge misfit dislocations (MDs) in the miscut direction arise in the form of short segments on intersections of 60° MDs. Substrate misorientation from the singular plane made it possible to discover the MD configurations consisting of a short segment of an edge MD and only two 60° MDs diverging from this segment in the miscut direction.

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Applied Physics Letters  (Volume:92 ,  Issue: 13 )