By Topic

Fabrication of gate stack with high gate work function for implantless enhancement-mode GaAs n-channel metal-oxide-semiconductor field effect transistor applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Ming Zhu ; Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore (NUS), 117576 Singapore ; Hock-Chun Chin, C. ; Samudra, G.S. ; Yee-Chia Yeo

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The guidelines for the selection of gate stacks in using an implantless enhancement-mode GaAs n-channel metal-oxide-semiconductor field effect transistor, which is based on a gate material with high work function, are studied using two dimensional device simulation. By employing the silane surface passivation, a high quality gate stack on GaAs substrate comprising of a complementary metal-oxide semiconductor compatible tungsten nitride (WNx) metal gate, which can be easily etched, and a high-permittivity HfAlO gate dielectric is demonstrated. The high work function of 4.97 eV and the equivalent oxide thickness of 2.3 nm were achieved for this gate stack, which meets the above mentioned normally off operation requirements.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 12 )