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Intrafacet migration effects in InGaN/GaN structures grown on triangular GaN ridges studied by submicron beam x-ray diffraction

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8 Author(s)
Bonanno, P.L. ; Department of Physics, New Jersey Institute of Technology, Newark, New Jersey 07102, USA ; OMalley, S.M. ; Sirenko, A.A. ; Kazimirov, A.
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Synchrotron radiation has been utilized for x-ray diffraction and reciprocal space mapping of InGaN/GaN multiple-quantum-well (MQW) structures grown on the sidewalls of 10-μm-wide triangular GaN ridges with {1-1.1} facets. Samples were produced by lateral overgrowth through a patterned dielectric mask by using metal-organic vapor-phase epitaxy. Global MQW strain, period, and the tilt of the (00.1) crystallographic planes have been measured across the sidewall facets using a 240 nm x-ray beam. Results of this study are interpreted in terms of suppressed intrafacet migration of In and Ga precursors during the MQW growth.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 12 )

Date of Publication:

Mar 2008

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