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Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays

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4 Author(s)
An, Sung Jin ; National CRI Center for Semiconductor Nanorods and Department of Materials Science and Engineering, POSTECH, Pohang, Gyeongbuk 790-784, Republic of Korea ; Chae, Jee Hae ; Gyu-Chul Yi ; Park, Gil H.

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We report enhanced light output of GaN-based light-emitting diodes (LEDs) with vertically aligned ZnO nanorod arrays. The ZnO nanorod arrays were prepared on the top layer of GaN LEDs using catalyst-free metalorganic vapor phase epitaxy. Compared to conventional GaN LEDs, light output of GaN LEDs with the ZnO nanorod arrays increased up to 50% and 100% at applied currents of 20 and 50 mA, respectively. The source of the enhanced light output is also discussed.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 12 )