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1.55 μm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

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11 Author(s)
Tan, K.H. ; School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore ; Yoon, S.F. ; Loke, W.K. ; Wicaksono, S.
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We demonstrate a 1.55 μm GaAs/GaNAsSb/GaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAs/GaAs system. The 0.4-μm-thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was measured from 800 to 1700 nm. The GaNAsSb layer has a refractive index value of 3.42 at 1.55 μm wavelength. The propagation loss measured using the Fabry–Pérot resonance method was found to be affected by nitrogen-related defect absorption.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 11 )

Date of Publication:

Mar 2008

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