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Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane

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7 Author(s)
Chung, K.H. ; Princeton Institute of Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey, 08544, USA ; Yao, N. ; Benziger, J. ; Sturm, J.C.
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A precursor, neopentasilane, is used to produce high-quality silicon epitaxy by chemical vapor deposition under 700 °C with very high growth rates. Low background dopant concentration and excellent crystal quality were determined from secondary-ion-mass spectroscopy and cross sectional transmission electron microscopy. Growth rates as high as 130 nm/min at 600 °C have been achieved. Growth rates in nitrogen and hydrogen ambients are about equal for neopentasilane, unlike those for growth with low-order silanes. A concerted reaction, where an open site is generated at the same time the adatom is adsorbed, is proposed as a possible mechanism for both the high growth rate with neopentasilane as well as the similar rate with hydrogen and nitrogen carriers.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 11 )

Date of Publication:

Mar 2008

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