Cart (Loading....) | Create Account
Close category search window

Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Chung, K.H. ; Princeton Institute of Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey, 08544, USA ; Yao, N. ; Benziger, J. ; Sturm, J.C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A precursor, neopentasilane, is used to produce high-quality silicon epitaxy by chemical vapor deposition under 700 °C with very high growth rates. Low background dopant concentration and excellent crystal quality were determined from secondary-ion-mass spectroscopy and cross sectional transmission electron microscopy. Growth rates as high as 130 nm/min at 600 °C have been achieved. Growth rates in nitrogen and hydrogen ambients are about equal for neopentasilane, unlike those for growth with low-order silanes. A concerted reaction, where an open site is generated at the same time the adatom is adsorbed, is proposed as a possible mechanism for both the high growth rate with neopentasilane as well as the similar rate with hydrogen and nitrogen carriers.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 11 )

Date of Publication:

Mar 2008

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.