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Browse Journals & Magazines > Applied Physics Letters ...> Volume:92 Issue:11 Help

Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer

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6 Author(s)
Yang, Hongbin ; Surface Physics Laboratory and Department of Physics, Fudan University, Shanghai 200433, People’s Republic of China ; Zhensheng Tao ; Lin, Jianhui ; Lu, Fang
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The temperature and the power dependent photoluminescence (PL) of two types of Ge quantum dots (QDs) (small hut cluster and large dome) coincidentally grown on a strained Si0.7Ge0.3 buffer layer were systematically studied. Two PL peaks from the two types of QDs are demonstrated and show different behaviors with increasing temperature. Under low excitation power, the intensity and the energy position of PL peak from small QDs have maximum values at a mediate temperature. Such anomalous behaviors of PL spectra are qualitatively explained by a model based on thermally activated resonant tunneling of holes from large QDs to small QDs.

Published in:
Applied Physics Letters  (Volume:92 ,  Issue: 11 )

Date of Publication: Mar 2008

Page(s):
111907 - 111907-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2901873
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Mar 2008

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