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Resistive switching memory effect of ZrO2 films with Zr+ implanted

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6 Author(s)
Liu, Qi ; Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People’s Republic of China ; Guan, Weihua ; Long, Shibing ; Jia, Rui
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The Au/Cr/Zr+-implanted-ZrO2/n+-Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (Rratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5 V readout bias. Zr+-implanted-ZrO2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction.

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Applied Physics Letters  (Volume:92 ,  Issue: 1 )