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Browse Journals & Magazines > Applied Physics Letters ...> Volume:92 Issue:1 Help

Characterization of doped silicon in low carrier density region by terahertz frequency Faraday effect

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2 Author(s)
Ikebe, Yohei ; Department of Physics, School of Science, the University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo, Tokyo 113-0033, Japan ; Shimano, R.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2830697 

We report on optical characterization of doped semiconductors by using terahertz Faraday rotation measurements in Cross-Nicole configuration. The detection sensitivity of Faraday rotation angle as small as 0.5 mrad is obtained. The scheme is applied to an n-type silicon wafer of 525 μm thickness in carrier freeze-out temperature region. The carrier density below N=1×1014 cm-3 is evaluated under magnetic field B=1 T.

Published in:
Applied Physics Letters  (Volume:92 ,  Issue: 1 )

Date of Publication: Jan 2008

Page(s):
012111 - 012111-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2830697
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jan 2008

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