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Near infrared quantum cascade detector in GaN/AlGaN/AlN heterostructures

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8 Author(s)
Vardi, A. ; Technion-Israel Institute of Technology, Haifa 32000, Israel ; Bahir, G. ; Guillot, F. ; Bougerol, C.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2830704 

A quantum cascade detector in the GaN/AlGaN/AlN material system was implemented. The design takes advantage of the large internal field existing in the nitrides in order to generate the essential saw tooth energy level structure. The device operates in the near IR spectral range with a room temperature responsivity at λ=1.7 μm of 10 mA/W (1000 V/W) at zero bias. The spectroscopic measurements are in good agreement with simulations.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 1 )

Date of Publication:

Jan 2008

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