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Type-II InGaN-GaNAs quantum wells for lasers applications

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3 Author(s)
Arif, R.A. ; Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, 7 Asa Drive, Bethlehem, Pennsylvania 18015, USA ; Hongping Zhao ; Tansu, Nelson

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2829600 

We present a visible III-nitride gain medium based on type-II InGaN-GaNAs quantum well (QW), employing thin dilute-As (∼3%) GaNAs layer. The utilization of GaNAs layer shifts the hole confinement to the center of the type-II QW, which significantly reduces the charge separation effect. The optical gain and spontaneous recombination rate of the type-II InGaN-GaNAs QW are analyzed and compared with those of conventional InGaN QW emitting in the blue regime (λ∼450 nm), using six-band k.p formalism for energy dispersion of the III-nitride wurtzite semiconductor. The use of type-II QW leads to significant improvement in the optical gain and spontaneous recombination rate.

Published in:

Applied Physics Letters  (Volume:92 ,  Issue: 1 )

Date of Publication:

Jan 2008

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