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Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

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9 Author(s)
Lin, H.C. ; School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 ; Kim, S.K. ; Chang, D. ; Xuan, Y.
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Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors (MISFETs) with very thin self-assembled organic nanodielectrics (SANDs) are presented. The application of SAND on compound semiconductors offers unique opportunities for high-performance devices. Thus, 1 μm gate-length depletion-mode n-channel SAND/GaAs MISFETs exhibit low gate leakage current densities of 10-2–10-5 A/cm2, a maximum drain current of 260 mA/mm at 2 V forward gate bias, and a maximum intrinsic transconductance of 127 mS/mm. These devices achieve a current cutoff frequency (fT) of 10.6 GHz and a maximum oscillation frequency (fmax) of 6.9 GHz. Nearly hysteresis-free Ids-Vgs characteristics and low flicker noise indicate that a high-quality SAND-GaAs interface is achieved.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 9 )

Date of Publication:

Aug 2007

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