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Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer

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10 Author(s)
Loh, T.H. ; Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117865, Singapore ; Nguyen, H.S. ; Murthy, R. ; Yu, M.B.
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The authors report the performance of selective epitaxial Ge (400 nm) on Si-on-insulator p-i-n mesa-type normal incidence photodiodes using ∼14 nm low-temperature Si0.8Ge0.2 buffer without cyclic annealing. At -1 V, very low bulk dark current densities of 1.5–2 mA/cm2 were obtained indicating good material quality, and the peripheral surface leakage current densities were 14–19.5 μA/cm. For 28 μm diameter round photodiode, the highest achieved external quantum efficiencies at -5 V were 27%, 9%, and 2.9% for 850 nm, 1.3 μm, and 1.56 μm optical wavelengths, respectively. 15×15 μm2 square photodiode has 3 dB bandwidth ≥15 GHz at -1 V. Good performance was achieved without high-temperature annealing, suggesting easy integration of Ge/Si photodiode unto existing complementary metal-oxide-semiconductor process.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 7 )

Date of Publication:

Aug 2007

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