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Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures

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7 Author(s)
Wang, K.Y. ; Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 106 Taiwan, Republic of China ; Huang, W.P. ; Cheng, H.H. ; Sun, G.
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The authors report photoluminescence (PL) measurement on a series of Si/SiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment—desired for electroluminescent devices—can be achieved by strain engineering.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 7 )